Ossido di indio

Basic notitia

Nome cinese: ossido di indio

Alias ​​cinese:ossido di indio(III);ossido di nanoindio;triossido di indio;ossido di indio/nanoossidoIndio;

Nome inglese: ossido di indio

Italianalias: triossido di diindio, sesquiossido di indio; ossido di indio (III); triossido di diindio sesquiossido di indio;

Diindiumtrioxide,Indiumsesquioxidum,Indium(III)oxidum;Indiumoxidum;

CASNumber: 1312-43-2

Molecularformula:In₂O₃

Molecularweight:277.63400

Accuratemass: 277.79200

PSA:43.37000

Physicaldata

Vaporpressure(mmHg,25ºC):<0.01

Solubility:insolubleinwater,solubleinhotmineralacid

Preparationmethod

1.Burninghigh-puritymetalindiuminairorcalciningindiumcarbonatetoproduceIn₂O,InO,In₂O₃,high-purityIn₂O₃canbeobtainedbyfinelycontrollingthereductionconditions.Thespraycombustionprocesscanalsobeusedtoprepareindiumtrioxideceramicpowderwithanaverageparticlesizeof20nm.

2.Whenindiumhydroxideisburnttoprepareindiumtrioxide,ifthetemperatureistoohigh,In₂O₃maybethermallydecomposedIfthetemperatureistoolow,itisdifficulttocompletelydehydrate,andthegeneratedoxideishygroscopic,soheatingtemperatureandtimeareimportantfactors.Inaddition,becauseIn₂O₃iseasilyreduced,itmustbekeptinanoxidizingatmospherefrequently.

3.Burnindiumhydroxideintheairtoaconstantweightat850℃togenerateIn₂O₃,andthenintheairHeatat1000°Cfor30min.Otherindiumnitrate,indiumcarbonate,andindiumsulfatecanalsobeburntintheairtoproduceindiumtrioxide.

Applicationareas

1.Usedasspectralpurereagentsandmaterialsforelectroniccomponents,etc.

2.Usedasprotectivecoatingsformetalmirrors,photoelectricdisplaysSemiconductorfilmisalsousedtomakeindiumsaltandglass.

Therawmaterialsoftenusedinresistivetouchscreensaremainlyusedforfluorescentscreens,glass,ceramics,chemicalreagents,etc.Inaddition,itiswidelyusedintraditionalfieldssuchascoloredglass,ceramics,alkalinemanganesebatteries,mercuryreplacementcorrosioninhibitor,andchemicalreagents.Inrecentyears,ithasbeenwidelyusedinhigh-techfieldssuchastheoptoelectronicindustryandmilitaryfields.Itisespeciallysuitableforprocessingintoindiumtinoxide(ITO)targetmaterials,manufacturingtransparentelectrodesandtransparentheatreflectormaterials,andusedintheproductionofflatliquidcrystaldisplaysanddefoggingice.Device.

Calculatedchemicaldata

1.Referencevalueforhydrophobicparametercalculation (XlogP) nemo

2.Numberofhydrogenbonddonors: 0

3.Thenumberofhydrogenbondacceptors:3

4.Thenumberofrotatablechemicalbonds: 0

5.Thenumberoftautomers nullus

6.Topologicalmolecularpolarsurfacearea3

7.Numberofheavyatoms: 5

8.Surfacecharge: 0

9.Complexity: 0

10.Numberofisotopicatoms: 0

11.Determinethenumberofatomicstereocenters:0

12.Uncertainthenumberofatomicstereocenters:0

13.Determinethenumberofchemicalbondstereocenters:0

14.Uncertainthenumberofchemicalbondstereocenters:0

15.Numberofcovalentbondunits: 5

Molecularstructuredata

1.Monoisotopicmass:277.7925Da

2.Nominalmass:278Da

3.Averagemass:277.6342Da

EcologicalData

Generallyspeaking,itisharmlesstowater.Donotdischargematerialsintothesurroundingenvironmentwithoutgovernmentpermission.

Propertiesandstability

Inthepresenceofhydrogenorotherreducingagents,heatingto400～500℃canbereducedtometallicindiumorlow-valentindiumoxide.

Decomposeintoloweroxidesathightemperature.Inaddition,itcanreactwithmetalindiumathightemperature.AlthoughtheIn₂O₃producedbylow-temperatureburningiseasilysolubleinacid,themorecompleteitisafterhigh-temperaturetreatment,themoreInsolubleandhygroscopicitydisappeared.Whenindiumtrioxideisreducedwithhydrogenunderredheat,metallicindiumisproduced.

Toxicologicalinformation

RTECSnumber: NL1770000

Acutetoxicity:ratoralLD:>10gm/kg;mouseintroductionperitonealLDLo:5gm/kg;MousemouthLDLo:10gm/kg

Packaging

Thisproductcanbepackedinplasticbucketsandsealedwiththermoplasticsleevesaccordingtouserrequirements.

Sarcina: 20kg/pera

Storagemethod

Keepthecontainersealedandstoreinacool,dryplacetoensureagoodworkingroomTheventilationorexhaustdevice.