Chipbasics
1.Theroleofthechip:
ThechipisthemainrawmaterialoftheLED,andtheLEDmainlydependsonthechiptoemitlight.
2.Thecompositionofthewafer.
Maxime includearsenic(AS), aluminium (AL), gallium (Ga), indium (IN), phosphorus (P), nitrogen (N), strontium (Sr) aliquot ex hiscelements composita sunt.
Three.Classificationofchips
1.Accordingtoluminousbrightness:
A.Generalbrightness:R,H,G,Y,E,etc.
B.Highrightness:VG,VY,SR,etc.
C.Ultrahighrightness:UG,UY,UR,UYS,URF,UE,ETC.
D.Invisiblelight (infrared): IR, SIR, VIR, HIR
E.Infraredrecomingtube: PT
F.Photoelectrictube:PD
2.Accordingtotheconstituentelements:
A.Binarywafers (phosphorus,gallium):H,G,etc.
B. Ternarywafers (Phosphorus, gallium, arsenicum): SR, HR, UR, etc.
C.Quaternaria (phosphori, aluminium, gallium, indium): SRF, HRF,URF, VY, HY, UY, UYS, UE, HE, UG, etc.
Four.Chipcharacteristicstable(seethefollowingtablefordetails)
Wavelengthoflight-emittingcolorelementsofchipmodel(um) Wavelengthoflight-emittingcolorelementsofchipmodel(um)
SBIbluelnGaN/sic430HYsuperbrightyellowAlGalnP595
SBKbrighterbluelnGaN/sic468SEbrightorangeGaAsP/GaP610
DBKbrighterblueGaunN/Gan470HEsuperbrightorangeAlGalnP620
SGLcyanlnGaN/sic502UEbrightestorangeAlGalnP620
DGLbrightercyanLnGaN/GaN505URFbrightestredAlGalnP630
DGMbrightercyanlnGaN523EorangeGaAsP/GaP635
PGpuregreenGaP555RredGAaAsP655
SGStandardGreenGaP560SRBrighterRedGaA/AS660
GGreenGaP565HRSuperBrightRedGaAlAs660
VGBrighterGreenGaP565URBrightestRedGaAlAs660
UGmostBrightgreenAIGalnP574HhighredGaP697
YyellowGaAsP/GaP585HIRinfraredGaAlAs850
VYbrightyellowGaAsP/GaP585SIRinfraredGaAlAs880
UYSBrightestYellowAlGalnP587VIRInfraredGaAlAs940
UYBrightestYellowAlGalnP595IRInfraredGaAs940
V.Precautionsandothers
1.ChipManufacturerName:A.Guanglei(ED)B.Guolian(FPD)C.Dingyuan(TK)D.Huashang(AOC)
E.Hanguang(HL)F.AXTG.Guang
2.Payattentiontoelectrostaticprotectionduringtheproductionanduseofthechip.
VI.Chipstructure
Singlechipstructureanddualchipstructureareshowninthefigure.
Seven.Waferparameters
Apparentiaofthewafer
Theshapeofthewaferissquareorrectangular,withsingleordoubleelectrodesontheuppersurface,
Mostoftheredandyellowwafersaresingle-electrodewafers,andtheuppersurfacehaspositiveornegativeelectrodes.
Mostblue/greenwafersaredoubleelectrodes,andgenerallyroundelectrodesarepositiveelectrodes.PleaserefertothewaferforspecificelectrodeconditionsSpecification.
Chipsize
Chipsaredividedbysize,themorecommonlyusedonesarethefollowingspecifications
(1mil=25.4µm)
Smallsize
7*9mil
9*11mil
12*12mil
10* 18mil
14*14mil
15*15mil
10*23min
Largesize
24*24mil
28*28mil
40* 40mil
45*45mil
60*60mil
8.Mainphotoelectricparametersofthechip
9.Waferevaluation
1.Evaluationprocess:
Incominginspection==>Arrangetrialproduction==>Bondingtest==>Bondingwiretest==>Agingexperiment==>Badanalysis==>OK/NG
2.Theinspectionitemsinclude:
2.1.Whetherthereisaspecificationfortheincomingdata(thereisnospecificationItisnotrecommendedtoexperimentblindly);
2.2. An in adventuschipparametri (splendor, intentione, necem, etc.) occurrat?
Doestheappearance(electrodeposition) matchthespecifications?Thesameinthebook;
.
2.4. Electricalis probatio: utrum probatio actus VF, IV, WL, IR, verticitatis, etc.
Therearemanymanufacturersthatdonothaveconditionaltestsforthisitem.Itisrecommendedtomakeitintoaproducttestduringthetrialproductionprocess.
Producttest(butthepolarityisbesttobeconfirmedfirst);
3.Trialproduction
AfterthevisualinspectionisOK,starttheorderingexperimentandwhetherotherperformancesaresuitable
Bulkproduction,preparerelevantmaterialsandtrialproductionmaterialswhenordering
4.Bondingevaluationitems:
a.PRrecognitionability
b.airpressure
c.thimbleheight
p>d.Nozzlesize
e.Weldingheadpressure
f.Stickinessofchipfilm
g.Howabouttheproductivity,
p>h.Thrust (post pushphenomenon)
If there is any problem, it musttberecorded.
Weldingwireevaluationitems:
a.Weldingwirepressure
b.Power
c.Time
d.Bondingwirehotplatetemperature
e.PRrecognitionability
f.Archeight
g.Goldenballsize
h.Productioncapacity
i.Pullforce (breakpointposition)
If there is any problem, it musttberecorded.
Agingtest
a.Electricaltest(includingESD);
b.Accordingtothereliabilityteststandard,takematerialsandpreparetodothefollowingexperiments:
p>Ante experimentum, productoedstobenumeratur,ut testetur perficiendi ofVF/IR/IV/WL,et productmust correspondtothedata);
Experiment1:Lightupandsaveatroomtemperature(conditionTa=25±5℃,RH=55±20%RH,
20mApoweronfor1000hrs)
Experiment2:Hightemperature and highhumiditylighting(conditionsTa=85+5,-3℃,RH=85%+5,-10%;
20mApoweronfor1000hrs)
Experimentthree:thermalshock[conditionTa=85℃(30minuta)～Ta=25℃(30minuta)
Ta=-40℃(30minutes)～Ta=85℃(30minuta)]
Aliae experimenta canbeselectae ad opus tuum;
Testevery100/168hoursduring experimentum;
Alldefectiveproductsmustbeanalyzed.