Esittely
Suuritehoiset transistorsaregenerallycalledpowerDevices, jotka ovat käyttäneet PowerSelektronicstechnology (Powerelektronicstochnology).ITSESSESSENCEEFCTIONES CONTROLTherAsiblePerationOfpowerelektroniikka-.
Yleisesti ottaminen, powerDevicesUSUborundUrkHighVoltageandHighcurrentConditions, jaGenerallyHaveTheCharacteristicsOfHighwithStandVolte, Suurtentyöntekijöiden virallinen jaPargeself-DissipationPower.ThereareceDifferencesInpowerDevices.
Luokittelu
PowerDevicesasAwholeNbebedIidedInTounControllebleDevices, Semi-ControllebledEvices jaControlleblebledEvices.
1.Hallitsemattomat laitteet
GuideonandOffCannotBeControlledByControlSignals, ITISCOMPLEYSEMETERMALDBYTHECURRENDVOLTAGECONDIONSSITBESSINTHECICUTUS.Mukaan lukien voimankäytöt.
2.Puolikontrollibledevice
ItreferstothEcontrolsignalCanbeUnedTocontrolitSturn-on, butcannotControlitSturn.Mukaan lukien THEthyristor (SCR) ja.
3.Täysin kontrollobledevices
ReferstodevicesthatcanbeturnEdonandoffusingControlSignals, mukaan lukien voimavarannesistorit (GTR), PowerfieldEffefftTransistors (PowerMosfet), Turnofftyristor (GTO), ErilaattGatebipolartransistor (igradGBT), static -intiandriandristor (static), static -intiandriand (staattinen), static -inthyristor (mctThyristor), staticommand (static), staticomm (static), staticomm (static)..
Täysin kontrollobledevicescanalsobedividedintotwocategories:currentcontroltypeandvoltagecontroltype.
ThecurrentControlTypeLents: GTR (Powertriode), SCR (ControllAbleThyristor), TRIAC (Controlleble Halluurectionalthyristor), GTO (TurnOfftransistor) Andväen.
TheVoltageControlTypeclubludes: PowerMosfet, IGBT, MctandSit.
Suorituskyvyn vertailu
1.Valikoima
Sovellettavuus (whethertechnicalRequirementsaremet), talous (kustannustehokkuus);
2.Operagfrequency Comparison
SIT>MOSFET(3-10MHz)>IGBT(50kHz)>SITH>GTR(30kHz)>MCT>GTO;
3.PowerCapecity Comparison
GTO(6000V/6000A)>SITH>MCT>IGBT(2500V/1000A)>GTR(1800V/400A)>SIT>powerMOSFET(1000V/100A);
p>4.Vertailu
PowerMOSFET>SIT>SITH>GTO>IGBT>GTR>MCT;
5.Vertailukonttori
VoltageControltyPecontrolisEaTerControlTancurrentControlType-, Butthesanormalt-konseptio- ja thecontrolismoredIfficulthanpowerMosfeTandigbtbtbbt.
DesignPrinciples OfBasedRivEciruit
GtrbasedriveciruitAndPerformanceDirectlyAfectTheworkingConditionsOfGtr, SothefollowingTWoPointSouldSouldSidedwhendesigningTheBasedRivEricuTuts: OptimizedDrivingModeandautomaticfastProtection.
Theso-calledoptimaaldriveistocontroltheswitchingprocessOfthegTheidealbasedRivEcurrentWaveFormOrtionTocreasetheswitchingspeedDrecetheswitchingloss.IdealBasedRivEcurrentWaveForm.InordertoSpeeduptheturn-intimeandreduceturn-onloss, the forwardbasecurrentnotOnlyRequiresasteEpleadingEdgeintheInitialturn-operiod, butalSorequiresAcecertPerioDOFOverdrivecurrentib1.TheBasedRivEcurrEntib2IntHeturn-O-PhasesheskephegthegtrjustinthEquasi-tyydyttelyvaltaa.Keksintö, theValueOfoverdrivecurrentib1IselektivitTobeaBout3TimestHeValueOfquasi-tyydyttyneetBasedRivEcurrentib2.5S, ja leveyskäyttäjät.WhenthegTristornedoff, sitenvertainen.InpracticalSovellukset, useinChoosiIB3 = ib1orbigger.TämäKindofBasedRiveWaveformisGeneraLyRealizedByAnAccelerationCircuitAnABakerCLampCircuit.
Adddition, thegtrdriveciruitShouldalsohaveaself-suojausfunction, sothatTheBasedRivesignalcanbequicklyandAuToMaticafactOffinafaultStatetoAvoidDamageToTheGtrtr.TermianyTypesOfProtectionCircuits, jotka valittiin.InorderToimproVetheswitchingspeed, ananti-SaturaationProtectionCircuitCanbeuse;.INDADDION, THEEREPULSEWIDTHIMILITECTICICUICUITSADPROTECTORCICUTSFOROVOLTOLTE, OIKEUDELLIN.
TermianyformsOfBasedRivEciruit jaThereThreeobViousTrendsInTheSummary:
1.InordertoimproVetheworkingspeed, tyydyttämisen vastainenBakercLampcircuitSusedastheBasiccircuit;
2.Jatkuvana
3.Jatkuvasti.
Sovellukset
Usedtocontrolpoweroutput,high-frequencyhigh-powertransistorapplicationsinthescanningcircuitofelectronicequipment,suchascolorTV,monitors,oscilloscopes,horizontalscanningcircuitsoflargegamemachines,Videoamplifiercircuit,poweramplifieroftransmitter,suchasradiofrequencyoutputcircuitofwalkie-talkie,mobilephone,high-frequencyoscillationcircuitandhigh-speedelectronicswitchcircuit,etc.
Thehigh-powertubemustbeinstalledonametalradiatorbecauseitgeneratesalargeamountofheat,andtheareaofthemetalradiatormustbelargeenough,otherwisethetechnicalperformancespecifiedinthetechnicaldocumentationwillnotbeachieved.