Introduction
The conductivity increases with an oxidation atmosphere, which is an oxide semiconductor. It is a p-type semiconductor; the conductivity is increased as a reduction semiconductor, which is an n-type semiconductor; The conductive type is a p-type or n-type semiconductor as a gender semiconductor as a size of oxygen partial pressure in the atmosphere. The non-single crystal oxide can be prepared directly by direct oxidation of pure metal or by low temperature chemical reactions such as metallogenic chloride with water of water. Preparation of oxide single crystals with flames, melt growth and gas phase reactive growth method.
As the "new generation of basic materials" and the technical personnel of global displays are concerned with the oxide semiconductor TFT. Since the oxide semiconductor TFT is one of the best candidates for the TFT material of the ultra high fine liquid crystal panel, an organic EL panel, and an electronic paper. It is expected to be practicalized in 2012 to 2013, and may also become a means of implementation of electronic components such as "flexibility" and "transparent".
Features
The oxide semiconductor is usually easily immersed as an oxide of an insulator, but has a semiconductor properties. Among the many substances, the most concerned is "Transparent amorphous oxide semiconductor (Taos: Transparent Amorphous Oxide Semiconductors". Amorphous IGZO (in-Ga-Zn-O) is a representative example. In addition to South Korea companies such as Samsung and LG displays, Japan's Sharp, Ryniant Printing and Canon, etc. are also committed to the application development of TFT.
Taos TFT carrier transmissions up to 250px2 / vs or more, and the unevenness of characteristics is also small. Therefore, the driving pixel is "4K × 2K" (4000 × 2000 pixel level), and a new generation of high-definition liquid crystal displays having a driving frequency of 240 Hz. Current Standard Technology - Amorphous silicon TFT and an organic semiconductor TFT which are vigorously developed as a new generation technique is only available below CM2 / VS below the carrier mobility, which is difficult to apply to the above use. Even in the field of the organic EL display, the TAOS TFT is achieved when the development case is more than the low temperature polysilicon TFT in the development case, because the AOS TFT can suppress the Due to TFT characteristics in the organic EL panel. The unevenness caused by unevenness. The TAOS film can be formed by a sputtering method, and the manufacturing cost is also easily reduced.