The first sample
Samsung Electronics January 4, 2011 announced that it has completed the development of a specification DDR4DRAM memory of history, and using 30nm-class process manufacturing its first batches of samples.
Data Specification
DDR4 memory standards yet final decisions. This sample belongs to Samsung UDIMM type, capacity of 2GB, operating voltage is only 1.2V, operating frequency is 2133MHz, but with new circuit architecture can be up to 3200MHz. In contrast, DDR3 memory standard frequency of only up to 1600MHz, general operating voltage of 1.5V, energy-saving version also 1.35V. This alone, DDR4 memory will be saving up to 40%.
According to previous plan, DDR4 memory frequency up to the highest possible 4266MHz, the voltage down to 1.1V and even then it is possible to 1.05V.
Samsung said this had appeared DDR4 memory used in high-end graphics memory particles "PseudoOpenDrain" (virtual open-drain) technology, reading, writing data when the leakage rate is only DDR3 memory half.
Samsung said the end of December 2010 has provided a sample of this controller manufacturer DDR4 memory is tested, and plans to work closely with a number of memory manufacturers to help JEDEC organization in 2011 Nianxia six months to complete the development work DDR4 standard specification is expected to be commercially available starting in 2012.
first "Chinese core" domestic memory
Koi Yi Pro DDR4 memory module (2)
first "Chinese core "pure domestic production in deep DDR4 memory amount. Light Wei Yi Pro Series memory modules, manufacturing from Shenzhen Jia Jin Electronic Technology, Inc., is Pingshan mass production.