Въведение
High-PowerTransistorSareGenerallyCalledPowerDevices, които belongtothefieldofpowerelectronicstechnology (PowerElectronicStechnology).Issessenceistoeffective controltherredableaperationofpowerelectronicdevices, andProvideHigh-powerOutputfortheloadthroughpowerelectronicdevices.
Като цяло, PowerDevicesUsuliadualwhereHunderHighVoltageAndHighCurrentConditions и по отношение на подемност..TherearectistendifferencesInpowerDevices.
Класификация
PowerDevicesasawholecanbedividedintouncontrollabledevices, полуконтролистични evicesevices и Controllabledevices.
1.Неконтролируеми устройства
Ръководствониандфканотбеконтролид ByControlsignals, ItisComplelyDeTermined ByTheCurrentAndVoltageConditionsitBearSinTheCircuit, който belongstonaturalConductionandnaturalshutdown.Включително PowerDiodes.
2.Semi-controllabledevice
Itreferstothecontrolsignalcanbeusedtocontrolitsturn-on, butcannotcontrolitsturn-off, itsturn-offcanonlybewithstoodinthemaincircuitthevoltageandcurrentconditionseredeterminedbynaturalshutdown.Включително THETHETHYRISTOR (SCR) и Тебибиденция, получени от тях.
3.Напълно controllabledevices
referstodevicesthatcanbeturnedonandoffusingcontrolsignals,includingpowertransistors(GTR),powerfieldeffecttransistors(powerMOSFET),Turnoffthyristor(GTO),insulatedgatebipolartransistor(IGBT),MOScontrolledthyristor(MCT),staticinductiontransistor(SIT),staticinductionthyristor(SITH)andintegratedgatecommutatedthyristor(IGCT),etc.
Напълно controllabledevicescanalsobedividedintotwocategories:currentcontroltypeandvoltagecontroltype.
THECURRENTCONTROLTYPEINCLUDES: GTR (POWERTRIODE), SCR (ControllableThistor), Triac (контролируембидьорско -секунди), GTO (Turnofftransistor) и Soon.
Thevoltagecontroltypeincludes: PowerMosfet, IGBT, McTandsit.
Сравнение на производителността
1.Selectionprinciple
Приложимост (WhethertechnicalRequirementsaremet), икономика (ефективност на разходите);
2.ОПЕРАЦИОНЕН КРЕКТИНСКОРМАРОН
SIT>MOSFET(3-10MHz)>IGBT(50kHz)>SITH>GTR(30kHz)>MCT>GTO;
3.PowerCapacityComparison
GTO(6000V/6000A)>SITH>MCT>IGBT(2500V/1000A)>GTR(1800V/400A)>SIT>powerMOSFET(1000V/100A);
p>4.Сравнофон-Stateresistance
PowerMOSFET>SIT>SITH>GTO>IGBT>GTR>MCT;
5.Сравкопосочно controldifficulty
Voltagecontroltypecontroliseasiertocontrolthancurrentcontroltype, butthesisitisanormally-insevice, andthecontrolismoredifficultthanpowermosfetandigbt.
DesignPrinciplesofbasedRiveCircuit
GtrbasedRiveCircuitAndAnderformancedIrectyLeapCectTheWeRingConditionSoFGTR, SOTHEFOLLOWINGTWOUTSSHOULDBECONEDEDWHENDESINGETHEBASEDRIVECIRCUIT: Оптимизиран divingModeAndautomatyfastprotection.
Theso-calleDoPtimalDriveistocontroltheswitchingprocessofthegtrwiththeidealbasedrivecurrentwaveforminordertoincreasetheswitchingspeededredecetheswitchingloss.IdealBasedRiveCurrentWaveForm.InorderToSpeedupTheTurn-ontimeandDreduceturn-onloss, theforwardbasecurrentnotonlyrequiresasteepleadingedgeintheinitialturn-onperiod, butalsorequisecaterperiodofoverdrivecurrentib1.TheBaseRiveCurrentiB2Intheturn-onphaseshouldeepthegtrjustintequasi-saturatedState, soastoShortEstorageTimets.Инженерален, thevalueofoverdrivecurrentib1isselectedtobeabout3timesthevalueofquasi-наситените басейни rasevecurrentib2, theleadingedgeftheoverdrivecurrentwaveformshouldbecontrolledwithin00.5s, anditswidthhouldbecontrolledatabout2s.WhenthegtristurneDoff, там basedrivecurrentib3shouldbelarger, inordertospeedupthecarrieRextractionSpeedInthebasearea, краткотрайно-offtime, andreducetheturn-offloss.InpracticalПриложения, oftenchooseib3 = ib1orbigger.Thiskindofbasedrivewaveformisgenerallallyrealizedbyanaccelerationcircuitandabakerclampcirit.
Последствие, thegtrdrivecircuitshouldsohaveaself-protectionFunction, sothatthebasedrivesignalcanbequicklyandautomaticatycutoffinafaultstatetoavoiddamagetothegtr.Therearemanytypesofprotectioncircuits, които chanbeselected appropratielycordingtothedifferentrequirementsofdevicesandscircuits.InorderToimProveTheSwitchingspeed, ananti-saturationProtectionCircuitCanBeSued;.Последствие, therearepulseWidthLimitingCircuitsAndAndProtectionCircuitsForOverVoltage, свръхток, andoverheatingpotreventdamagetothegtr.
TherearemanyformsofbasedRiveCircuit и theRearethreeOboiveTrendsIntheSummary:
1.Inordertoimprovetheworkingspeed, анти-saturationbakerclampcircuitisusedasthebasiccircuit;
2.Непрекъснато insyimproveandedexpandtheautomaticprotectionfunction;
3.Непрекъснато insyimproveandperfectintermsofturn-onandTurn-offseped.
Приложения
Usedtocontrolpoweroutput,high-frequencyhigh-powertransistorapplicationsinthescanningcircuitofelectronicequipment,suchascolorTV,monitors,oscilloscopes,horizontalscanningcircuitsoflargegamemachines,Videoamplifiercircuit,poweramplifieroftransmitter,suchasradiofrequencyoutputcircuitofwalkie-talkie,mobilephone,high-frequencyoscillationcircuitandhigh-speedelectronicswitchcircuit,etc.
Thehigh-powertubemustbeinstalledonametalradiatorbecauseitgeneratesalargeamountofheat,andtheareaofthemetalradiatormustbelargeenough,otherwisethetechnicalperformancespecifiedinthetechnicaldocumentationwillnotbeachieved.